BSP125 E6327 - MOSFET N-CH 600V 120MA SOT-223

Producentens varenummer

BSP125 E6327

Intern Part Number

ABC-BSP125 E6327

Fabrikant

Infineon Technologies

Kort beskrivelse

MOSFET N-CH 600V 120MA SOT-223

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

59013 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har BSP125 E6327 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for BSP125 E6327

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : BSP125 E6327

Fabrikant : Infineon Technologies

Beskrivelse : MOSFET N-CH 600V 120MA SOT-223

Serie : SIPMOS®

Del Status : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 600V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 120mA (Ta)

Drevspænding (Maks. Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 45 Ohm @ 120mA, 10V

Vgs (th) (Max) @ Id : 2.3V @ 94µA

Gate Charge (Qg) (Max) @ Vgs : 6.6nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 150pF @ 25V

FET-funktion : -

Power Dissipation (Max) : 1.8W (Ta)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : PG-SOT223-4

Pakke / tilfælde : TO-261-4, TO-261AA

Vægt : -

Tilstand : Nye og originale

relaterede links : BSP1 , BSP125

Dokumenter til BSP125 E6327

Dataark : BSP125 E6327.pdf

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