TK8R2A06PL,S4X - X35 PB-F POWER MOSFET TRANSISTOR

Producentens varenummer

TK8R2A06PL,S4X

Intern Part Number

ABC-TK8R2A06PL,S4X

Fabrikant

Toshiba Semiconductor and Storage

Kort beskrivelse

X35 PB-F POWER MOSFET TRANSISTOR

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

411719 Pieces

henvisning Pris

~~USD 0.795~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har TK8R2A06PL,S4X på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for TK8R2A06PL,S4X

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : TK8R2A06PL,S4X

Fabrikant : Toshiba Semiconductor and Storage

Beskrivelse : X35 PB-F POWER MOSFET TRANSISTOR

Serie : U-MOSIX-H

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 60V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 50A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 11.4 mOhm @ 8A, 4.5V

Vgs (th) (Max) @ Id : 2.5V @ 300µA

Gate Charge (Qg) (Max) @ Vgs : 28.4nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 1990pF @ 25V

FET-funktion : -

Power Dissipation (Max) : 36W (Tc)

Driftstemperatur : 175°C (TJ)

Monteringstype : Through Hole

Leverandør Device Package : TO-220SIS

Pakke / tilfælde : TO-220-3 Full Pack

Vægt : -

Tilstand : Nye og originale

relaterede links : TK8R , TK8R2A0

Dokumenter til TK8R2A06PL,S4X

Dataark : TK8R2A06PL,S4X.pdf

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