FESB8JT-E3/81 - DIODE GEN PURP 600V 8A TO263AB

Producentens varenummer
Intern Part Number
Kort beskrivelse
DIODE GEN PURP 600V 8A TO263AB
RoHS status
Bly fri / RoHS
Leveringstid
1-2 dage
disponible mængde
791301 Pieces
henvisning Pris
USD 0.41365
Vores pris
- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har FESB8JT-E3/81 på lager til sælge.
Shipping muligheder og forsendelse tid:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betalingsmuligheder:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Specifikationer for FESB8JT-E3/81

Kvalitet Garanti : 365 dage garanti
Stock Resource : Franchise Distributør / Producent Direct
Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Varenummer : FESB8JT-E3/81
Fabrikant : Vishay Semiconductor Diodes Division
Beskrivelse : DIODE GEN PURP 600V 8A TO263AB
Serie : -
Del Status : Active
Diodetype : Standard
Spænding - DC-omvendt (Vr) (Max) : 600V
Nuværende - Gennemsnitlig Rectified (Io) : 8A
Spænding - Videresend (Vf) (Max) @ Hvis : 1.5V @ 8A
Hastighed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50ns
Nuværende - Reverse Lækage @ Vr : 10µA @ 600V
Kapacitans @ Vr, F : -
Monteringstype : Surface Mount
Pakke / tilfælde : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Leverandør Device Package : TO-263AB
Driftstemperatur - Junction : -55°C ~ 150°C
Vægt : -
Tilstand : Nye og originale
relaterede links : FESB , FESB8J

Dokumenter til FESB8JT-E3/81

Dataark : FESB8JT-E3/81.pdf

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