TH58BYG2S3HBAI6 - IC FLASH 4G PARALLEL 67VFBGA

Producentens varenummer

TH58BYG2S3HBAI6

Intern Part Number

ABC-TH58BYG2S3HBAI6

Fabrikant

Toshiba Memory America, Inc.

Kort beskrivelse

IC FLASH 4G PARALLEL 67VFBGA

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

135032 Pieces

henvisning Pris

~~USD 3.08~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har TH58BYG2S3HBAI6 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for TH58BYG2S3HBAI6

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : TH58BYG2S3HBAI6

Fabrikant : Toshiba Memory America, Inc.

Beskrivelse : IC FLASH 4G PARALLEL 67VFBGA

Serie : Benand™

Del Status : Active

Hukommelsestype : Non-Volatile

Hukommelsesformat : FLASH

Teknologi : FLASH - NAND (SLC)

Hukommelsesstørrelse : 4Gb (512M x 8)

Urfrekvens : -

Skriv cyklus Tid - Ord, Side : 25ns

Adgangstid : 25ns

Memory Interface : Parallel

Spænding - Supply : 1.7V ~ 1.95V

Driftstemperatur : -40°C ~ 85°C (TA)

Monteringstype : Surface Mount

Pakke / tilfælde : 67-VFBGA

Leverandør Device Package : 67-VFBGA (6.5x8)

Vægt : -

Tilstand : Nye og originale

relaterede links : TH58B , TH58BYG

Dokumenter til TH58BYG2S3HBAI6

Dataark : TH58BYG2S3HBAI6.pdf

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