NP80N055NDG-S18-AY - MOSFET N-CH 55V 80A TO-262

Producentens varenummer

NP80N055NDG-S18-AY

Intern Part Number

ABC-NP80N055NDG-S18-AY

Fabrikant

Renesas Electronics America

Kort beskrivelse

MOSFET N-CH 55V 80A TO-262

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

50752 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har NP80N055NDG-S18-AY på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for NP80N055NDG-S18-AY

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : NP80N055NDG-S18-AY

Fabrikant : Renesas Electronics America

Beskrivelse : MOSFET N-CH 55V 80A TO-262

Serie : -

Del Status : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 55V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 80A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 6.9 mOhm @ 40A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 135nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 6900pF @ 25V

FET-funktion : -

Power Dissipation (Max) : 1.8W (Ta), 115W (Tc)

Driftstemperatur : 175°C (TJ)

Monteringstype : Through Hole

Leverandør Device Package : TO-262

Pakke / tilfælde : TO-262-3 Long Leads, I²Pak, TO-262AA

Vægt : -

Tilstand : Nye og originale

relaterede links : NP80N0 , NP80N055N

Dokumenter til NP80N055NDG-S18-AY

Dataark : NP80N055NDG-S18-AY.pdf

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