SQJB60EP-T1_GE3 - MOSFET 2 N-CH 60V POWERPAK SO8

Producentens varenummer

SQJB60EP-T1_GE3

Intern Part Number

ABC-SQJB60EP-T1_GE3

Fabrikant

Vishay Siliconix

Kort beskrivelse

MOSFET 2 N-CH 60V POWERPAK SO8

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

1151346 Pieces

henvisning Pris

~~USD 0.284295~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har SQJB60EP-T1_GE3 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for SQJB60EP-T1_GE3

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : SQJB60EP-T1_GE3

Fabrikant : Vishay Siliconix

Beskrivelse : MOSFET 2 N-CH 60V POWERPAK SO8

Serie : Automotive, AEC-Q101, TrenchFET®

Del Status : Active

FET Type : 2 N-Channel (Dual)

FET-funktion : Standard

Afløb til Source Voltage (VDSS) : 60V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 30A (Tc)

Rds On (Max) @ Id, Vgs : 12 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 30nC @ 10V

Inputkapacitans (Ciss) (Max) @ Vds : 1600pF @ 25V

Strøm - Max : 48W

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstype : Surface Mount

Pakke / tilfælde : PowerPAK® SO-8 Dual

Leverandør Device Package : PowerPAK® SO-8 Dual

Vægt : -

Tilstand : Nye og originale

relaterede links : SQJB6 , SQJB60E

Dokumenter til SQJB60EP-T1_GE3

Dataark : SQJB60EP-T1_GE3.pdf

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