IRF6798MTR1PBF - MOSFET N-CH 25V 37A DIRECTFET-MX

Producentens varenummer

IRF6798MTR1PBF

Intern Part Number

ABC-IRF6798MTR1PBF

Fabrikant

Infineon Technologies

Kort beskrivelse

MOSFET N-CH 25V 37A DIRECTFET-MX

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

40640 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har IRF6798MTR1PBF på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for IRF6798MTR1PBF

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : IRF6798MTR1PBF

Fabrikant : Infineon Technologies

Beskrivelse : MOSFET N-CH 25V 37A DIRECTFET-MX

Serie : HEXFET®

Del Status : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 25V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 37A (Ta), 197A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 1.3 mOhm @ 37A, 10V

Vgs (th) (Max) @ Id : 2.35V @ 150µA

Gate Charge (Qg) (Max) @ Vgs : 75nC @ 4.5V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 6560pF @ 13V

FET-funktion : Schottky Diode (Body)

Power Dissipation (Max) : 2.8W (Ta), 78W (Tc)

Driftstemperatur : -40°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : DIRECTFET™ MX

Pakke / tilfælde : DirectFET™ Isometric MX

Vægt : -

Tilstand : Nye og originale

relaterede links : IRF6 , IRF6798

Dokumenter til IRF6798MTR1PBF

Dataark : IRF6798MTR1PBF.pdf

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