NDD60N900U1-1G - MOSFET N-CH 600V 5.9A IPAK-4

Producentens varenummer

NDD60N900U1-1G

Intern Part Number

ABC-NDD60N900U1-1G

Fabrikant

ON Semiconductor

Kort beskrivelse

MOSFET N-CH 600V 5.9A IPAK-4

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

87328 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har NDD60N900U1-1G på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for NDD60N900U1-1G

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : NDD60N900U1-1G

Fabrikant : ON Semiconductor

Beskrivelse : MOSFET N-CH 600V 5.9A IPAK-4

Serie : -

Del Status : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 600V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 5.7A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 900 mOhm @ 2.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V

Vgs (Max) : ±25V

Inputkapacitans (Ciss) (Max) @ Vds : 360pF @ 50V

FET-funktion : -

Power Dissipation (Max) : 74W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Through Hole

Leverandør Device Package : I-PAK

Pakke / tilfælde : TO-251-3 Short Leads, IPak, TO-251AA

Vægt : -

Tilstand : Nye og originale

relaterede links : NDD6 , NDD60N9

Dokumenter til NDD60N900U1-1G

Dataark : NDD60N900U1-1G.pdf

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