SIS778DN-T1-GE3 - MOSFET N-CH 30V 35A POWERPAK1212

Producentens varenummer

SIS778DN-T1-GE3

Intern Part Number

ABC-SIS778DN-T1-GE3

Fabrikant

Vishay Siliconix

Kort beskrivelse

MOSFET N-CH 30V 35A POWERPAK1212

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

40846 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har SIS778DN-T1-GE3 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for SIS778DN-T1-GE3

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : SIS778DN-T1-GE3

Fabrikant : Vishay Siliconix

Beskrivelse : MOSFET N-CH 30V 35A POWERPAK1212

Serie : -

Del Status : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 30V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 35A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 5 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 42.5nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 1390pF @ 15V

FET-funktion : Schottky Diode (Body)

Power Dissipation (Max) : 52W (Tc)

Driftstemperatur : -50°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : PowerPAK® 1212-8

Pakke / tilfælde : PowerPAK® 1212-8

Vægt : -

Tilstand : Nye og originale

relaterede links : SIS77 , SIS778D

Dokumenter til SIS778DN-T1-GE3

Dataark : SIS778DN-T1-GE3.pdf

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