TK4A60DB(STA4,Q,M) - MOSFET N-CH 600V 3.7A TO-220SIS

Producentens varenummer

TK4A60DB(STA4,Q,M)

Intern Part Number

ABC-TK4A60DB(STA4,Q,M)

Fabrikant

Toshiba Semiconductor and Storage

Kort beskrivelse

MOSFET N-CH 600V 3.7A TO-220SIS

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

51072 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har TK4A60DB(STA4,Q,M) på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for TK4A60DB(STA4,Q,M)

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : TK4A60DB(STA4,Q,M)

Fabrikant : Toshiba Semiconductor and Storage

Beskrivelse : MOSFET N-CH 600V 3.7A TO-220SIS

Serie : π-MOSVII

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 600V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 3.7A (Ta)

Drevspænding (Maks. Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 2 Ohm @ 1.9A, 10V

Vgs (th) (Max) @ Id : 4.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 11nC @ 10V

Vgs (Max) : ±30V

Inputkapacitans (Ciss) (Max) @ Vds : 540pF @ 25V

FET-funktion : -

Power Dissipation (Max) : 35W (Tc)

Driftstemperatur : 150°C (TJ)

Monteringstype : Through Hole

Leverandør Device Package : TO-220SIS

Pakke / tilfælde : TO-220-3 Full Pack

Vægt : -

Tilstand : Nye og originale

relaterede links : TK4A60 , TK4A60DB(

Dokumenter til TK4A60DB(STA4,Q,M)

Dataark : TK4A60DB(STA4,Q,M).pdf

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