A2G35S200-01SR3 - AIRFAST RF POWER GAN TRANSISTOR

Producentens varenummer

A2G35S200-01SR3

Intern Part Number

ABC-A2G35S200-01SR3

Fabrikant

NXP USA Inc.

Kort beskrivelse

AIRFAST RF POWER GAN TRANSISTOR

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

38556 Pieces

henvisning Pris

~~USD 61.71792~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har A2G35S200-01SR3 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for A2G35S200-01SR3

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : A2G35S200-01SR3

Fabrikant : NXP USA Inc.

Beskrivelse : AIRFAST RF POWER GAN TRANSISTOR

Serie : -

Del Status : Active

Transistor Type : LDMOS

Frekvens : 3.4GHz ~ 3.6GHz

Gevinst : 16.1dB

Spænding - Test : 48V

Nuværende vurdering : -

Støj figur : -

Nuværende - Test : 291mA

Power - Output : 180W

Spændingsvurdering : 125V

Pakke / tilfælde : NI-400S-2S

Leverandør Device Package : NI-400S-2S

Vægt : -

Tilstand : Nye og originale

relaterede links : A2G35 , A2G35S2

Dokumenter til A2G35S200-01SR3

Dataark : A2G35S200-01SR3.pdf

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