GP1M010A080H - MOSFET N-CH 800V 9.5A TO220

Producentens varenummer

GP1M010A080H

Intern Part Number

ABC-GP1M010A080H

Fabrikant

Global Power Technologies Group

Kort beskrivelse

MOSFET N-CH 800V 9.5A TO220

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

84640 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har GP1M010A080H på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for GP1M010A080H

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : GP1M010A080H

Fabrikant : Global Power Technologies Group

Beskrivelse : MOSFET N-CH 800V 9.5A TO220

Serie : -

Del Status : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 800V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 9.5A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 1.05 Ohm @ 4.75A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 53nC @ 10V

Vgs (Max) : ±30V

Inputkapacitans (Ciss) (Max) @ Vds : 2336pF @ 25V

FET-funktion : -

Power Dissipation (Max) : 290W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Through Hole

Leverandør Device Package : TO-220

Pakke / tilfælde : TO-220-3

Vægt : -

Tilstand : Nye og originale

relaterede links : GP1M , GP1M01

Dokumenter til GP1M010A080H

Dataark : GP1M010A080H.pdf

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