HGT1S10N120BNST - IGBT 1200V 35A 298W TO263AB

Producentens varenummer

HGT1S10N120BNST

Intern Part Number

ABC-HGT1S10N120BNST

Fabrikant

ON Semiconductor

Kort beskrivelse

IGBT 1200V 35A 298W TO263AB

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

363083 Pieces

henvisning Pris

~~USD 0.90148~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har HGT1S10N120BNST på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for HGT1S10N120BNST

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : HGT1S10N120BNST

Fabrikant : ON Semiconductor

Beskrivelse : IGBT 1200V 35A 298W TO263AB

Serie : -

Del Status : Active

IGBT Type : NPT

Spænding - Samler Emitter Opdeling (Max) : 1200V

Nuværende - Samler (Ic) (Max) : 35A

Nuværende - Collector Pulsed (Icm) : 80A

Vce (på) (Max) @ Vge, Ic : 2.7V @ 15V, 10A

Strøm - Max : 298W

Skifte energi : 320µJ (on), 800µJ (off)

Input Type : Standard

Gate Charge : 100nC

Td (tænd / sluk) @ 25 ° C : 23ns/165ns

Test betingelse : 960V, 10A, 10 Ohm, 15V

Reverse Recovery Time (trr) : -

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Pakke / tilfælde : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Leverandør Device Package : TO-263AB

Vægt : -

Tilstand : Nye og originale

relaterede links : HGT1S , HGT1S10

Dokumenter til HGT1S10N120BNST

Dataark : HGT1S10N120BNST.pdf

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