SI5511DC-T1-GE3 - MOSFET N/P-CH 30V 4A 1206-8

Producentens varenummer

SI5511DC-T1-GE3

Intern Part Number

ABC-SI5511DC-T1-GE3

Fabrikant

Vishay Siliconix

Kort beskrivelse

MOSFET N/P-CH 30V 4A 1206-8

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

53989 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har SI5511DC-T1-GE3 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for SI5511DC-T1-GE3

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : SI5511DC-T1-GE3

Fabrikant : Vishay Siliconix

Beskrivelse : MOSFET N/P-CH 30V 4A 1206-8

Serie : TrenchFET®

Del Status : Obsolete

FET Type : N and P-Channel

FET-funktion : Logic Level Gate

Afløb til Source Voltage (VDSS) : 30V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 4A, 3.6A

Rds On (Max) @ Id, Vgs : 55 mOhm @ 4.8A, 4.5V

Vgs (th) (Max) @ Id : 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 7.1nC @ 5V

Inputkapacitans (Ciss) (Max) @ Vds : 435pF @ 15V

Strøm - Max : 3.1W, 2.6W

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Pakke / tilfælde : 8-SMD, Flat Lead

Leverandør Device Package : 1206-8 ChipFET™

Vægt : -

Tilstand : Nye og originale

relaterede links : SI551 , SI5511D

Dokumenter til SI5511DC-T1-GE3

Dataark : SI5511DC-T1-GE3.pdf

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