NDD03N80Z-1G - MOSFET N-CH 800V 2.9A IPAK

Producentens varenummer

NDD03N80Z-1G

Intern Part Number

ABC-NDD03N80Z-1G

Fabrikant

ON Semiconductor

Kort beskrivelse

MOSFET N-CH 800V 2.9A IPAK

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

87264 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har NDD03N80Z-1G på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for NDD03N80Z-1G

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : NDD03N80Z-1G

Fabrikant : ON Semiconductor

Beskrivelse : MOSFET N-CH 800V 2.9A IPAK

Serie : -

Del Status : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 800V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 2.9A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 4.5 Ohm @ 1.2A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs : 17nC @ 10V

Vgs (Max) : ±30V

Inputkapacitans (Ciss) (Max) @ Vds : 440pF @ 25V

FET-funktion : -

Power Dissipation (Max) : 96W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Through Hole

Leverandør Device Package : I-PAK

Pakke / tilfælde : TO-251-3 Short Leads, IPak, TO-251AA

Vægt : -

Tilstand : Nye og originale

relaterede links : NDD0 , NDD03N

Dokumenter til NDD03N80Z-1G

Dataark : NDD03N80Z-1G.pdf

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