SI7911DN-T1-GE3 - MOSFET 2P-CH 20V 4.2A 1212-8

Producentens varenummer

SI7911DN-T1-GE3

Intern Part Number

ABC-SI7911DN-T1-GE3

Fabrikant

Vishay Siliconix

Kort beskrivelse

MOSFET 2P-CH 20V 4.2A 1212-8

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

60502 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har SI7911DN-T1-GE3 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for SI7911DN-T1-GE3

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : SI7911DN-T1-GE3

Fabrikant : Vishay Siliconix

Beskrivelse : MOSFET 2P-CH 20V 4.2A 1212-8

Serie : TrenchFET®

Del Status : Obsolete

FET Type : 2 P-Channel (Dual)

FET-funktion : Logic Level Gate

Afløb til Source Voltage (VDSS) : 20V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 4.2A

Rds On (Max) @ Id, Vgs : 51 mOhm @ 5.7A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 15nC @ 4.5V

Inputkapacitans (Ciss) (Max) @ Vds : -

Strøm - Max : 1.3W

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Pakke / tilfælde : PowerPAK® 1212-8 Dual

Leverandør Device Package : PowerPAK® 1212-8 Dual

Vægt : -

Tilstand : Nye og originale

relaterede links : SI791 , SI7911D

Dokumenter til SI7911DN-T1-GE3

Dataark : SI7911DN-T1-GE3.pdf

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