SI4966DY-T1-E3 - MOSFET 2N-CH 20V 8SOIC

Producentens varenummer

SI4966DY-T1-E3

Intern Part Number

ABC-SI4966DY-T1-E3

Fabrikant

Vishay Siliconix

Kort beskrivelse

MOSFET 2N-CH 20V 8SOIC

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

52455 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har SI4966DY-T1-E3 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for SI4966DY-T1-E3

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : SI4966DY-T1-E3

Fabrikant : Vishay Siliconix

Beskrivelse : MOSFET 2N-CH 20V 8SOIC

Serie : TrenchFET®

Del Status : Obsolete

FET Type : 2 N-Channel (Dual)

FET-funktion : Logic Level Gate

Afløb til Source Voltage (VDSS) : 20V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : -

Rds On (Max) @ Id, Vgs : 25 mOhm @ 7.1A, 4.5V

Vgs (th) (Max) @ Id : 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 50nC @ 4.5V

Inputkapacitans (Ciss) (Max) @ Vds : -

Strøm - Max : 2W

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Pakke / tilfælde : 8-SOIC (0.154", 3.90mm Width)

Leverandør Device Package : 8-SO

Vægt : -

Tilstand : Nye og originale

relaterede links : SI49 , SI4966D

Dokumenter til SI4966DY-T1-E3

Dataark : SI4966DY-T1-E3.pdf

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