IGT60R070D1ATMA1 - IC GAN FET 600V 60A 8HSOF

Producentens varenummer

IGT60R070D1ATMA1

Intern Part Number

ABC-IGT60R070D1ATMA1

Fabrikant

Infineon Technologies

Kort beskrivelse

IC GAN FET 600V 60A 8HSOF

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

75036 Pieces

henvisning Pris

~~USD 8.09949~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har IGT60R070D1ATMA1 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for IGT60R070D1ATMA1

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : IGT60R070D1ATMA1

Fabrikant : Infineon Technologies

Beskrivelse : IC GAN FET 600V 60A 8HSOF

Serie : CoolGaN™

Del Status : Active

FET Type : N-Channel

Teknologi : GaNFET (Gallium Nitride)

Afløb til Source Voltage (VDSS) : 600V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 31A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : -

Rds On (Max) @ Id, Vgs : -

Vgs (th) (Max) @ Id : 1.6V @ 2.6mA

Gate Charge (Qg) (Max) @ Vgs : -

Vgs (Max) : -10V

Inputkapacitans (Ciss) (Max) @ Vds : 380pF @ 400V

FET-funktion : -

Power Dissipation (Max) : 125W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : PG-HSOF-8-3

Pakke / tilfælde : 8-PowerSFN

Vægt : -

Tilstand : Nye og originale

relaterede links : IGT60 , IGT60R07

Dokumenter til IGT60R070D1ATMA1

Dataark : IGT60R070D1ATMA1.pdf

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