EPC2012 - GANFET TRANS 200V 3A BUMPED DIE

Producentens varenummer

EPC2012

Intern Part Number

ABC-EPC2012

Fabrikant

EPC

Kort beskrivelse

GANFET TRANS 200V 3A BUMPED DIE

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

40288 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har EPC2012 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for EPC2012

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : EPC2012

Fabrikant : EPC

Beskrivelse : GANFET TRANS 200V 3A BUMPED DIE

Serie : eGaN®

Del Status : Discontinued at Digi-Key

FET Type : N-Channel

Teknologi : GaNFET (Gallium Nitride)

Afløb til Source Voltage (VDSS) : 200V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 3A (Ta)

Drevspænding (Maks. Rds On, Min Rds On) : 5V

Rds On (Max) @ Id, Vgs : 100 mOhm @ 3A, 5V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 1.8nC @ 5V

Vgs (Max) : +6V, -5V

Inputkapacitans (Ciss) (Max) @ Vds : 145pF @ 100V

FET-funktion : -

Power Dissipation (Max) : -

Driftstemperatur : -40°C ~ 125°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : Die

Pakke / tilfælde : Die

Vægt : -

Tilstand : Nye og originale

relaterede links : EP , EPC

Dokumenter til EPC2012

Dataark : EPC2012.pdf

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