TPAR3J S1G - DIODE AVALANCHE 600V 3A TO277A

Producentens varenummer

TPAR3J S1G

Intern Part Number

ABC-TPAR3J S1G

Fabrikant

Taiwan Semiconductor Corporation

Kort beskrivelse

DIODE AVALANCHE 600V 3A TO277A

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

2704261 Pieces

henvisning Pris

~~USD 0.12104~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har TPAR3J S1G på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for TPAR3J S1G

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : TPAR3J S1G

Fabrikant : Taiwan Semiconductor Corporation

Beskrivelse : DIODE AVALANCHE 600V 3A TO277A

Serie : -

Del Status : Active

Diodetype : Avalanche

Spænding - DC-omvendt (Vr) (Max) : 600V

Nuværende - Gennemsnitlig Rectified (Io) : 3A

Spænding - Videresend (Vf) (Max) @ Hvis : 1.55V @ 3A

Hastighed : Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr) : 120ns

Nuværende - Reverse Lækage @ Vr : 10µA @ 600V

Kapacitans @ Vr, F : 58pF @ 4V, 1MHz

Monteringstype : Surface Mount

Pakke / tilfælde : TO-277, 3-PowerDFN

Leverandør Device Package : TO-277A (SMPC)

Driftstemperatur - Junction : -55°C ~ 175°C

Vægt : -

Tilstand : Nye og originale

relaterede links : TPA , TPAR3

Dokumenter til TPAR3J S1G

Dataark : TPAR3J S1G.pdf

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