RQ3E100BNTB - MOSFET N-CH 30V 10A HSMT8

Producentens varenummer

RQ3E100BNTB

Intern Part Number

ABC-RQ3E100BNTB

Fabrikant

Rohm Semiconductor

Kort beskrivelse

MOSFET N-CH 30V 10A HSMT8

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

6103951 Pieces

henvisning Pris

~~USD 0.053625~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har RQ3E100BNTB på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for RQ3E100BNTB

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : RQ3E100BNTB

Fabrikant : Rohm Semiconductor

Beskrivelse : MOSFET N-CH 30V 10A HSMT8

Serie : -

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 30V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 10A (Ta)

Drevspænding (Maks. Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 10.4 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 22nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 1100pF @ 15V

FET-funktion : -

Power Dissipation (Max) : 2W (Ta)

Driftstemperatur : 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : 8-HSMT (3.2x3)

Pakke / tilfælde : 8-PowerVDFN

Vægt : -

Tilstand : Nye og originale

relaterede links : RQ3 , RQ3E1

Dokumenter til RQ3E100BNTB

Dataark : RQ3E100BNTB.pdf

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