TPC8111(TE12L,Q,M) - MOSFET P-CH 30V 11A SOP8 2-6J1B

Producentens varenummer

TPC8111(TE12L,Q,M)

Intern Part Number

ABC-TPC8111(TE12L,Q,M)

Fabrikant

Toshiba Semiconductor and Storage

Kort beskrivelse

MOSFET P-CH 30V 11A SOP8 2-6J1B

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

43911 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har TPC8111(TE12L,Q,M) på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for TPC8111(TE12L,Q,M)

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : TPC8111(TE12L,Q,M)

Fabrikant : Toshiba Semiconductor and Storage

Beskrivelse : MOSFET P-CH 30V 11A SOP8 2-6J1B

Serie : -

Del Status : Obsolete

FET Type : P-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 30V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 11A (Ta)

Drevspænding (Maks. Rds On, Min Rds On) : 4V, 10V

Rds On (Max) @ Id, Vgs : 12 mOhm @ 5.5A, 10V

Vgs (th) (Max) @ Id : 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 107nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 5710pF @ 10V

FET-funktion : -

Power Dissipation (Max) : 1W (Ta)

Driftstemperatur : 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : 8-SOP (5.5x6.0)

Pakke / tilfælde : 8-SOIC (0.173", 4.40mm Width)

Vægt : -

Tilstand : Nye og originale

relaterede links : TPC811 , TPC8111(T

Dokumenter til TPC8111(TE12L,Q,M)

Dataark : TPC8111(TE12L,Q,M).pdf

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