SQS966ENW-T1_GE3 - MOSFET N-CHAN 60V

Producentens varenummer

SQS966ENW-T1_GE3

Intern Part Number

ABC-SQS966ENW-T1_GE3

Fabrikant

Vishay Siliconix

Kort beskrivelse

MOSFET N-CHAN 60V

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

1529402 Pieces

henvisning Pris

~~USD 0.21402~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har SQS966ENW-T1_GE3 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for SQS966ENW-T1_GE3

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : SQS966ENW-T1_GE3

Fabrikant : Vishay Siliconix

Beskrivelse : MOSFET N-CHAN 60V

Serie : Automotive, AEC-Q101, TrenchFET®

Del Status : Active

FET Type : 2 N-Channel (Dual)

FET-funktion : Standard

Afløb til Source Voltage (VDSS) : 60V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 6A (Tc)

Rds On (Max) @ Id, Vgs : 36 mOhm @ 1.25A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 8.8nC @ 10V

Inputkapacitans (Ciss) (Max) @ Vds : 572pF @ 25V

Strøm - Max : 27.8W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstype : Surface Mount

Pakke / tilfælde : PowerPAK® 1212-8W

Leverandør Device Package : PowerPAK® 1212-8W

Vægt : -

Tilstand : Nye og originale

relaterede links : SQS96 , SQS966EN

Dokumenter til SQS966ENW-T1_GE3

Dataark : SQS966ENW-T1_GE3.pdf

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