IXTM35N30 - POWER MOSFET TO-3

Producentens varenummer

IXTM35N30

Intern Part Number

ABC-IXTM35N30

Fabrikant

IXYS

Kort beskrivelse

POWER MOSFET TO-3

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

42133 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har IXTM35N30 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for IXTM35N30

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : IXTM35N30

Fabrikant : IXYS

Beskrivelse : POWER MOSFET TO-3

Serie : GigaMOS™

Del Status : Last Time Buy

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 300V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 35A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 100 mOhm @ 17.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 220nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 4600pF @ 25V

FET-funktion : -

Power Dissipation (Max) : 300W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Through Hole

Leverandør Device Package : TO-204AE

Pakke / tilfælde : TO-204AE

Vægt : -

Tilstand : Nye og originale

relaterede links : IXT , IXTM

Dokumenter til IXTM35N30

Dataark : IXTM35N30.pdf

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