SIZ200DT-T1-GE3 - MOSFET N-CH DUAL 30V

Producentens varenummer

SIZ200DT-T1-GE3

Intern Part Number

ABC-SIZ200DT-T1-GE3

Fabrikant

Vishay Siliconix

Kort beskrivelse

MOSFET N-CH DUAL 30V

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

1344021 Pieces

henvisning Pris

~~USD 0.24354~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har SIZ200DT-T1-GE3 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for SIZ200DT-T1-GE3

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : SIZ200DT-T1-GE3

Fabrikant : Vishay Siliconix

Beskrivelse : MOSFET N-CH DUAL 30V

Serie : TrenchFET® Gen IV

Del Status : Active

FET Type : 2 N-Channel (Dual)

FET-funktion : Standard

Afløb til Source Voltage (VDSS) : 30V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)

Rds On (Max) @ Id, Vgs : 5.5 mOhm @ 10A, 10V, 5.8 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 28nC @ 10V, 30nC @ 10V

Inputkapacitans (Ciss) (Max) @ Vds : 1510pF @ 15V, 1600pF @ 15V

Strøm - Max : 4.3W (Ta), 33W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Pakke / tilfælde : 8-PowerWDFN

Leverandør Device Package : 8-PowerPair® (3.3x3.3)

Vægt : -

Tilstand : Nye og originale

relaterede links : SIZ20 , SIZ200D

Dokumenter til SIZ200DT-T1-GE3

Dataark : SIZ200DT-T1-GE3.pdf

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