EPC2022 - GAN TRANS 100V 3MOHM BUMPED DIE

Producentens varenummer

EPC2022

Intern Part Number

ABC-EPC2022

Fabrikant

EPC

Kort beskrivelse

GAN TRANS 100V 3MOHM BUMPED DIE

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

156704 Pieces

henvisning Pris

~~USD 2.387~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har EPC2022 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for EPC2022

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : EPC2022

Fabrikant : EPC

Beskrivelse : GAN TRANS 100V 3MOHM BUMPED DIE

Serie : eGaN®

Del Status : Active

FET Type : N-Channel

Teknologi : GaNFET (Gallium Nitride)

Afløb til Source Voltage (VDSS) : 100V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 60A (Ta)

Drevspænding (Maks. Rds On, Min Rds On) : 5V

Rds On (Max) @ Id, Vgs : 3.2 mOhm @ 25A, 5V

Vgs (th) (Max) @ Id : 2.5V @ 12mA

Gate Charge (Qg) (Max) @ Vgs : -

Vgs (Max) : +6V, -4V

Inputkapacitans (Ciss) (Max) @ Vds : 1500pF @ 50V

FET-funktion : -

Power Dissipation (Max) : -

Driftstemperatur : -40°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : Die

Pakke / tilfælde : Die

Vægt : -

Tilstand : Nye og originale

relaterede links : EP , EPC

Dokumenter til EPC2022

Dataark : EPC2022.pdf

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