FDN5618P_G - INTEGRATED CIRCUIT

Producentens varenummer

FDN5618P_G

Intern Part Number

ABC-FDN5618P_G

Fabrikant

ON Semiconductor

Kort beskrivelse

INTEGRATED CIRCUIT

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

40937 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har FDN5618P_G på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for FDN5618P_G

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : FDN5618P_G

Fabrikant : ON Semiconductor

Beskrivelse : INTEGRATED CIRCUIT

Serie : PowerTrench®

Del Status : Obsolete

FET Type : P-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 60V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 1.25A (Ta)

Drevspænding (Maks. Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 170 mOhm @ 1.25A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 13.8nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 430pF @ 30V

FET-funktion : -

Power Dissipation (Max) : 500mW (Ta)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : SuperSOT-3

Pakke / tilfælde : TO-236-3, SC-59, SOT-23-3

Vægt : -

Tilstand : Nye og originale

relaterede links : FDN , FDN56

Dokumenter til FDN5618P_G

Dataark : FDN5618P_G.pdf

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