BSG0810NDIATMA1 - MOSFET 2N-CH 25V 19A/39A 8TISON

Producentens varenummer

BSG0810NDIATMA1

Intern Part Number

ABC-BSG0810NDIATMA1

Fabrikant

Infineon Technologies

Kort beskrivelse

MOSFET 2N-CH 25V 19A/39A 8TISON

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

583912 Pieces

henvisning Pris

~~USD 0.56056~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har BSG0810NDIATMA1 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for BSG0810NDIATMA1

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : BSG0810NDIATMA1

Fabrikant : Infineon Technologies

Beskrivelse : MOSFET 2N-CH 25V 19A/39A 8TISON

Serie : OptiMOS™

Del Status : Active

FET Type : 2 N-Channel (Dual) Asymmetrical

FET-funktion : Logic Level Gate, 4.5V Drive

Afløb til Source Voltage (VDSS) : 25V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 19A, 39A

Rds On (Max) @ Id, Vgs : 3 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 8.4nC @ 4.5V

Inputkapacitans (Ciss) (Max) @ Vds : 1040pF @ 12V

Strøm - Max : 2.5W

Driftstemperatur : -55°C ~ 155°C (TJ)

Monteringstype : Surface Mount

Pakke / tilfælde : 8-PowerTDFN

Leverandør Device Package : PG-TISON-8

Vægt : -

Tilstand : Nye og originale

relaterede links : BSG08 , BSG0810

Dokumenter til BSG0810NDIATMA1

Dataark : BSG0810NDIATMA1.pdf

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