1N5406GHB0G - DIODE GEN PURP 600V 3A DO201AD

Producentens varenummer

1N5406GHB0G

Intern Part Number

ABC-1N5406GHB0G

Fabrikant

Taiwan Semiconductor Corporation

Kort beskrivelse

DIODE GEN PURP 600V 3A DO201AD

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

8022658 Pieces

henvisning Pris

~~USD 0.0408~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har 1N5406GHB0G på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for 1N5406GHB0G

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : 1N5406GHB0G

Fabrikant : Taiwan Semiconductor Corporation

Beskrivelse : DIODE GEN PURP 600V 3A DO201AD

Serie : Automotive, AEC-Q101

Del Status : Active

Diodetype : Standard

Spænding - DC-omvendt (Vr) (Max) : 600V

Nuværende - Gennemsnitlig Rectified (Io) : 3A

Spænding - Videresend (Vf) (Max) @ Hvis : 1V @ 3A

Hastighed : Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr) : -

Nuværende - Reverse Lækage @ Vr : 5µA @ 600V

Kapacitans @ Vr, F : 25pF @ 4V, 1MHz

Monteringstype : Through Hole

Pakke / tilfælde : DO-201AD, Axial

Leverandør Device Package : DO-201AD

Driftstemperatur - Junction : -55°C ~ 150°C

Vægt : -

Tilstand : Nye og originale

relaterede links : 1N5 , 1N540

Dokumenter til 1N5406GHB0G

Dataark : 1N5406GHB0G.pdf

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