GA10SICP12-263 - TRANS SJT 1200V 25A TO263-7

Producentens varenummer

GA10SICP12-263

Intern Part Number

ABC-GA10SICP12-263

Fabrikant

GeneSiC Semiconductor

Kort beskrivelse

TRANS SJT 1200V 25A TO263-7

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

43537 Pieces

henvisning Pris

~~USD 13.9587~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har GA10SICP12-263 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for GA10SICP12-263

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : GA10SICP12-263

Fabrikant : GeneSiC Semiconductor

Beskrivelse : TRANS SJT 1200V 25A TO263-7

Serie : -

Del Status : Active

FET Type : -

Teknologi : SiC (Silicon Carbide Junction Transistor)

Afløb til Source Voltage (VDSS) : 1200V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 25A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : -

Rds On (Max) @ Id, Vgs : 100 mOhm @ 10A

Vgs (th) (Max) @ Id : -

Gate Charge (Qg) (Max) @ Vgs : -

Vgs (Max) : -

Inputkapacitans (Ciss) (Max) @ Vds : 1403pF @ 800V

FET-funktion : -

Power Dissipation (Max) : 170W (Tc)

Driftstemperatur : 175°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : D2PAK (7-Lead)

Pakke / tilfælde : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Vægt : -

Tilstand : Nye og originale

relaterede links : GA10 , GA10SIC

Dokumenter til GA10SICP12-263

Dataark : GA10SICP12-263.pdf

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