IPP65R125C7XKSA1 - MOSFET N-CH 650V 18A TO220

Producentens varenummer

IPP65R125C7XKSA1

Intern Part Number

ABC-IPP65R125C7XKSA1

Fabrikant

Infineon Technologies

Kort beskrivelse

MOSFET N-CH 650V 18A TO220

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

151752 Pieces

henvisning Pris

~~USD 2.465~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har IPP65R125C7XKSA1 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for IPP65R125C7XKSA1

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : IPP65R125C7XKSA1

Fabrikant : Infineon Technologies

Beskrivelse : MOSFET N-CH 650V 18A TO220

Serie : CoolMOS™ C7

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 650V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 18A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 125 mOhm @ 8.9A, 10V

Vgs (th) (Max) @ Id : 4V @ 440µA

Gate Charge (Qg) (Max) @ Vgs : 35nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 1670pF @ 400V

FET-funktion : -

Power Dissipation (Max) : 101W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Through Hole

Leverandør Device Package : PG-TO220-3

Pakke / tilfælde : TO-220-3

Vægt : -

Tilstand : Nye og originale

relaterede links : IPP65 , IPP65R12

Dokumenter til IPP65R125C7XKSA1

Dataark : IPP65R125C7XKSA1.pdf

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