SIB419DK-T1-GE3 - MOSFET P-CH 12V 9A SC75-6

Producentens varenummer

SIB419DK-T1-GE3

Intern Part Number

ABC-SIB419DK-T1-GE3

Fabrikant

Vishay Siliconix

Kort beskrivelse

MOSFET P-CH 12V 9A SC75-6

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

42993 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har SIB419DK-T1-GE3 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for SIB419DK-T1-GE3

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : SIB419DK-T1-GE3

Fabrikant : Vishay Siliconix

Beskrivelse : MOSFET P-CH 12V 9A SC75-6

Serie : TrenchFET®

Del Status : Obsolete

FET Type : P-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 12V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 9A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 1.8V, 4.5V

Rds On (Max) @ Id, Vgs : 60 mOhm @ 5.2A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 11.82nC @ 5V

Vgs (Max) : ±8V

Inputkapacitans (Ciss) (Max) @ Vds : 562pF @ 6V

FET-funktion : -

Power Dissipation (Max) : 2.45W (Ta), 13.1W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : PowerPAK® SC-75-6L Single

Pakke / tilfælde : PowerPAK® SC-75-6L

Vægt : -

Tilstand : Nye og originale

relaterede links : SIB41 , SIB419D

Dokumenter til SIB419DK-T1-GE3

Dataark : SIB419DK-T1-GE3.pdf

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