IRFH5302DTRPBF - MOSFET N-CH 30V 29A 8VQFN

Producentens varenummer

IRFH5302DTRPBF

Intern Part Number

ABC-IRFH5302DTRPBF

Fabrikant

Infineon Technologies

Kort beskrivelse

MOSFET N-CH 30V 29A 8VQFN

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

680827 Pieces

henvisning Pris

~~USD 0.48077~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har IRFH5302DTRPBF på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for IRFH5302DTRPBF

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : IRFH5302DTRPBF

Fabrikant : Infineon Technologies

Beskrivelse : MOSFET N-CH 30V 29A 8VQFN

Serie : HEXFET®

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 30V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 29A (Ta), 100A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 2.5 mOhm @ 50A, 10V

Vgs (th) (Max) @ Id : 2.35V @ 100µA

Gate Charge (Qg) (Max) @ Vgs : 55nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 3635pF @ 25V

FET-funktion : -

Power Dissipation (Max) : 3.6W (Ta), 104W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : PQFN (5x6) Single Die

Pakke / tilfælde : 8-PowerVDFN

Vægt : -

Tilstand : Nye og originale

relaterede links : IRFH , IRFH530

Dokumenter til IRFH5302DTRPBF

Dataark : IRFH5302DTRPBF.pdf

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