EPC8009 - GANFET TRANS 65V 2.7A BUMPED DIE

Producentens varenummer

EPC8009

Intern Part Number

ABC-EPC8009

Fabrikant

EPC

Kort beskrivelse

GANFET TRANS 65V 2.7A BUMPED DIE

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

259770 Pieces

henvisning Pris

~~USD 1.26~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har EPC8009 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for EPC8009

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : EPC8009

Fabrikant : EPC

Beskrivelse : GANFET TRANS 65V 2.7A BUMPED DIE

Serie : eGaN®

Del Status : Active

FET Type : N-Channel

Teknologi : GaNFET (Gallium Nitride)

Afløb til Source Voltage (VDSS) : 65V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 2.7A (Ta)

Drevspænding (Maks. Rds On, Min Rds On) : 5V

Rds On (Max) @ Id, Vgs : 130 mOhm @ 500mA, 5V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 0.45nC @ 5V

Vgs (Max) : +6V, -4V

Inputkapacitans (Ciss) (Max) @ Vds : 52pF @ 32.5V

FET-funktion : -

Power Dissipation (Max) : -

Driftstemperatur : -40°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : Die

Pakke / tilfælde : Die

Vægt : -

Tilstand : Nye og originale

relaterede links : EP , EPC

Dokumenter til EPC8009

Dataark : EPC8009.pdf

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