SI2301BDS-T1-GE3 - MOSFET P-CH 20V 2.2A SOT23-3

Producentens varenummer

SI2301BDS-T1-GE3

Intern Part Number

ABC-SI2301BDS-T1-GE3

Fabrikant

Vishay Siliconix

Kort beskrivelse

MOSFET P-CH 20V 2.2A SOT23-3

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

3297147 Pieces

henvisning Pris

~~USD 0.099275~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har SI2301BDS-T1-GE3 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for SI2301BDS-T1-GE3

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : SI2301BDS-T1-GE3

Fabrikant : Vishay Siliconix

Beskrivelse : MOSFET P-CH 20V 2.2A SOT23-3

Serie : TrenchFET®

Del Status : Active

FET Type : P-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 20V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 2.2A (Ta)

Drevspænding (Maks. Rds On, Min Rds On) : 2.5V, 4.5V

Rds On (Max) @ Id, Vgs : 100 mOhm @ 2.8A, 4.5V

Vgs (th) (Max) @ Id : 950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 10nC @ 4.5V

Vgs (Max) : ±8V

Inputkapacitans (Ciss) (Max) @ Vds : 375pF @ 6V

FET-funktion : -

Power Dissipation (Max) : 700mW (Ta)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : SOT-23-3 (TO-236)

Pakke / tilfælde : TO-236-3, SC-59, SOT-23-3

Vægt : -

Tilstand : Nye og originale

relaterede links : SI230 , SI2301BD

Dokumenter til SI2301BDS-T1-GE3

Dataark : SI2301BDS-T1-GE3.pdf

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