SI3900DV-T1-GE3 - MOSFET 2N-CH 20V 2A 6-TSOP

Producentens varenummer

SI3900DV-T1-GE3

Intern Part Number

ABC-SI3900DV-T1-GE3

Fabrikant

Vishay Siliconix

Kort beskrivelse

MOSFET 2N-CH 20V 2A 6-TSOP

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

1425620 Pieces

henvisning Pris

~~USD 0.2296~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har SI3900DV-T1-GE3 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for SI3900DV-T1-GE3

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : SI3900DV-T1-GE3

Fabrikant : Vishay Siliconix

Beskrivelse : MOSFET 2N-CH 20V 2A 6-TSOP

Serie : TrenchFET®

Del Status : Active

FET Type : 2 N-Channel (Dual)

FET-funktion : Logic Level Gate

Afløb til Source Voltage (VDSS) : 20V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 2A

Rds On (Max) @ Id, Vgs : 125 mOhm @ 2.4A, 4.5V

Vgs (th) (Max) @ Id : 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 4nC @ 4.5V

Inputkapacitans (Ciss) (Max) @ Vds : -

Strøm - Max : 830mW

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Pakke / tilfælde : SOT-23-6 Thin, TSOT-23-6

Leverandør Device Package : 6-TSOP

Vægt : -

Tilstand : Nye og originale

relaterede links : SI390 , SI3900D

Dokumenter til SI3900DV-T1-GE3

Dataark : SI3900DV-T1-GE3.pdf

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