TPCC8A01-H(TE12LQM - MOSFET N-CH 30V 21A SBD 8TSON

Producentens varenummer

TPCC8A01-H(TE12LQM

Intern Part Number

ABC-TPCC8A01-H(TE12LQM

Fabrikant

Toshiba Semiconductor and Storage

Kort beskrivelse

MOSFET N-CH 30V 21A SBD 8TSON

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

39072 Pieces

henvisning Pris

~~USD 0~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har TPCC8A01-H(TE12LQM på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for TPCC8A01-H(TE12LQM

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : TPCC8A01-H(TE12LQM

Fabrikant : Toshiba Semiconductor and Storage

Beskrivelse : MOSFET N-CH 30V 21A SBD 8TSON

Serie : U-MOSV-H

Del Status : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 30V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 21A (Ta)

Drevspænding (Maks. Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 9.9 mOhm @ 10.5A, 10V

Vgs (th) (Max) @ Id : 2.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 1900pF @ 10V

FET-funktion : -

Power Dissipation (Max) : 700mW (Ta), 30W (Tc)

Driftstemperatur : 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : 8-TSON Advance (3.3x3.3)

Pakke / tilfælde : 8-PowerVDFN

Vægt : -

Tilstand : Nye og originale

relaterede links : TPCC8A , TPCC8A01-

Dokumenter til TPCC8A01-H(TE12LQM

Dataark : TPCC8A01-H(TE12LQM.pdf

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