TJ8S06M3L(T6L1,NQ) - MOSFET P-CH 60V 8A DPAK-3

Producentens varenummer

TJ8S06M3L(T6L1,NQ)

Intern Part Number

ABC-TJ8S06M3L(T6L1,NQ)

Fabrikant

Toshiba Semiconductor and Storage

Kort beskrivelse

MOSFET P-CH 60V 8A DPAK-3

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

1416982 Pieces

henvisning Pris

~~USD 0.231~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har TJ8S06M3L(T6L1,NQ) på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for TJ8S06M3L(T6L1,NQ)

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : TJ8S06M3L(T6L1,NQ)

Fabrikant : Toshiba Semiconductor and Storage

Beskrivelse : MOSFET P-CH 60V 8A DPAK-3

Serie : U-MOSVI

Del Status : Active

FET Type : P-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 60V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 8A (Ta)

Drevspænding (Maks. Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 104 mOhm @ 4A, 10V

Vgs (th) (Max) @ Id : 3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 19nC @ 10V

Vgs (Max) : +10V, -20V

Inputkapacitans (Ciss) (Max) @ Vds : 890pF @ 10V

FET-funktion : -

Power Dissipation (Max) : 27W (Tc)

Driftstemperatur : 175°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : DPAK+

Pakke / tilfælde : TO-252-3, DPak (2 Leads + Tab), SC-63

Vægt : -

Tilstand : Nye og originale

relaterede links : TJ8S06 , TJ8S06M3L

Dokumenter til TJ8S06M3L(T6L1,NQ)

Dataark : TJ8S06M3L(T6L1,NQ).pdf

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