IRFD224 - MOSFET N-CH 250V 630MA 4-DIP

Producentens varenummer

IRFD224

Intern Part Number

ABC-IRFD224

Fabrikant

Vishay Siliconix

Kort beskrivelse

MOSFET N-CH 250V 630MA 4-DIP

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

632100 Pieces

henvisning Pris

~~USD 0.51783~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har IRFD224 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for IRFD224

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : IRFD224

Fabrikant : Vishay Siliconix

Beskrivelse : MOSFET N-CH 250V 630MA 4-DIP

Serie : -

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 250V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 630mA (Ta)

Drevspænding (Maks. Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 1.1 Ohm @ 380mA, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 260pF @ 25V

FET-funktion : -

Power Dissipation (Max) : 1W (Ta)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Through Hole

Leverandør Device Package : 4-DIP, Hexdip, HVMDIP

Pakke / tilfælde : 4-DIP (0.300", 7.62mm)

Vægt : -

Tilstand : Nye og originale

relaterede links : IR , IRF

Dokumenter til IRFD224

Dataark : IRFD224.pdf

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