RN2712JE(TE85L,F) - TRANS 2PNP PREBIAS 0.1W ESV

Producentens varenummer

RN2712JE(TE85L,F)

Intern Part Number

ABC-RN2712JE(TE85L,F)

Fabrikant

Toshiba Semiconductor and Storage

Kort beskrivelse

TRANS 2PNP PREBIAS 0.1W ESV

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

7422324 Pieces

henvisning Pris

~~USD 0.0441~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har RN2712JE(TE85L,F) på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for RN2712JE(TE85L,F)

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : RN2712JE(TE85L,F)

Fabrikant : Toshiba Semiconductor and Storage

Beskrivelse : TRANS 2PNP PREBIAS 0.1W ESV

Serie : -

Del Status : Active

Transistor Type : 2 PNP - Pre-Biased (Dual) (Emitter Coupled)

Nuværende - Samler (Ic) (Max) : 100mA

Spænding - Samler Emitter Opdeling (Max) : 50V

Modstand - Base (R1) : 22 kOhms

Modstand - Emitterbase (R2) : -

DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V

Vce Mætning (Max) @ Ib, Ic : 300mV @ 250µA, 5mA

Nuværende - Collector Cutoff (Max) : 100nA (ICBO)

Frekvens - Overgang : 200MHz

Strøm - Max : 100mW

Monteringstype : Surface Mount

Pakke / tilfælde : SOT-553

Leverandør Device Package : ESV

Vægt : -

Tilstand : Nye og originale

relaterede links : RN271 , RN2712JE

Dokumenter til RN2712JE(TE85L,F)

Dataark : RN2712JE(TE85L,F).pdf

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