IMBD4448-HE3-18 - DIODE GEN PURP 75V 150MA SOT23

Producentens varenummer

IMBD4448-HE3-18

Intern Part Number

ABC-IMBD4448-HE3-18

Fabrikant

Vishay Semiconductor Diodes Division

Kort beskrivelse

DIODE GEN PURP 75V 150MA SOT23

RoHS status

Bly fri / RoHS

Leveringstid

1-2 dage

disponible mængde

16670479 Pieces

henvisning Pris

~~USD 0.019635~~

Vores pris

- (Venligst kontakt os for en bedre pris: [email protected])

ABC Semiconductor har IMBD4448-HE3-18 på lager til sælge.

Shipping muligheder og forsendelse tid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalingsmuligheder:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifikationer for IMBD4448-HE3-18

Kvalitet Garanti : 365 dage garanti

Stock Resource : Franchise Distributør / Producent Direct

Oprindelsesland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Varenummer : IMBD4448-HE3-18

Fabrikant : Vishay Semiconductor Diodes Division

Beskrivelse : DIODE GEN PURP 75V 150MA SOT23

Serie : Automotive, AEC-Q101

Del Status : Active

Diodetype : Standard

Spænding - DC-omvendt (Vr) (Max) : 75V

Nuværende - Gennemsnitlig Rectified (Io) : 150mA

Spænding - Videresend (Vf) (Max) @ Hvis : 1V @ 10mA

Hastighed : Small Signal =< 200mA (Io), Any Speed

Reverse Recovery Time (trr) : 4ns

Nuværende - Reverse Lækage @ Vr : 2.5µA @ 70V

Kapacitans @ Vr, F : -

Monteringstype : Surface Mount

Pakke / tilfælde : TO-236-3, SC-59, SOT-23-3

Leverandør Device Package : SOT-23

Driftstemperatur - Junction : 150°C (Max)

Vægt : -

Tilstand : Nye og originale

relaterede links : IMBD4 , IMBD444

Dokumenter til IMBD4448-HE3-18

Dataark : IMBD4448-HE3-18.pdf

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